1 November 1990 Proton damage effects in EEV charge-coupled devices
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Abstract
An examination is conducted of the effects of low-energy protons on CCD performance to evaluate the potential effectiveness of space-borne observational instruments. Degradation is described as a function of incremental dose, irradiation temperature, or proton energy for several device architectures, some of which incorporate design features to minimize signal-charge/trapping-site interaction. Degradation of the charge transfer is studied for very low proton doses, and dark current is found to vary directly with proton dose. Displacement damage in the signal-transfer channels generates charge-trapping sites that have a negative effect on EEV CCD performance. Degradation of charge-transfer performance is shown to be the most significant hindrance to effective CCD operations for X-ray spectroscopic applications.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew D. Holland, Andrew D. Holland, Anthony F. Abbey, Anthony F. Abbey, David H. Lumb, David H. Lumb, Kieran J. McCarthy, Kieran J. McCarthy, } "Proton damage effects in EEV charge-coupled devices", Proc. SPIE 1344, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy, (1 November 1990); doi: 10.1117/12.23266; https://doi.org/10.1117/12.23266
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