Optical Advances In Projection Photolithography

John W. Bossung; Edward S. Muraski

doi:10.1117/12.956108

6 September 1978 Optical Advances In Projection Photolithography

John W. Bossung, Edward S. Muraski

Proceedings Volume 0135, Developments in Semiconductor Microlithography III; (1978) https://doi.org/10.1117/12.956108
Event: Developments in Semiconductor Microlithography III, 1978, San Jose, United States

Abstract

The economics of circuit manufacture require die size to be minimized to maintain yield potential. As circuits increase in complexity, one way of achieving die size reduction is to reduce linewidths. Average production circuit geometries of 4 µm in 1977 are forecast to be reduced to 2 to 3 µm in 1981. Presently available systems will be able to meet the requirements for these smaller geometries. As these geometries get smaller, tighter tolerances will be required in all process parameters and some procedures will become obsolete. Improvements in optical projection will be made and shorter wavelengths of the exposing illumination will be used to obtain increased resolution. This will introduce a new set of conditions which must be addressed. Finally, as the industry looks to 1982 and beyond, submicrometer geometries will receive more and more attention as will X-ray and E-beam lithography.

Citation Download Citation

John W. Bossung and Edward S. Muraski "Optical Advances In Projection Photolithography", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); https://doi.org/10.1117/12.956108

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