1 October 1990 Adsorption and laser-induced desorption of dimethylcadmium from silicon
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Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23710
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
The dynamics of Cd (cH ) 2 chemisorption and spontaneous decomposit ion on n-type 51(100) with native surface oxide the pathwa and efficiencies of the adsorbate desorption due to the absorption of the XeC1 laser radiation by silicon have been examined using laser-induced desorption miss spectrorrtry (LIDMS ) . The k inetics of these sur face processes has been found to depend on the preceding laser irradiation of the surface. The extremely fast chemisorption and efficient decomposition of the parent rrlecules have been observed on the irradiated silicon surface. The competition between intact dissociative and recombination desorption pathways was responsible for the observed laser fluence dependences of the desorption of Cd(CI-6) and i ts fragments. 1 . INTROOIJCTIct4 1 . 1 . Laser chemical vapour depos ition (LCVD). Laser-induced deposition of thin filme on solid surfaces by using volatile organometallic precursors has been the subject of numerous investigations in the 8Os2. Due to the spatial/temporal localization of laser radiation and the resonant nature of laser-rr1ecule interaction this deposition technique has such attractive features as submicrometer resolution of deposits high film growth rate and high quality lowtemperature processing. The deposition process can be controlled by varying the laser parameters (wavelength fluence beam spot on the substrate surface scanning speed ). A var iety of mater ials can be depos I ted using LCVD. Of special interest for microelectronics is the deposition of
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Alexander P. Simonov, Alexander P. Simonov, Vladimir N. Varakin, Vladimir N. Varakin, } "Adsorption and laser-induced desorption of dimethylcadmium from silicon", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23710; https://doi.org/10.1117/12.23710

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