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1 October 1990 Kinetics of activation processes at laser resonance action
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Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990)
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
The activation processes kinetics has been considered for solids at laser resonance action within the semi classic approach1 The nonequilibrium function of particles distribution over the energy obtained has been used to calculate the energy averaged values and the probability of particles overcoming the potential barriers LTHE NON-EUILIBRIUMJUNCTIONS OF PARTICLES DISTRIBUTION A theoretical consideration of laser radiation interaction with a material is based as a rule on the appro ach accepted in quantum electronics1 In this case the radiation field is considered classical and the system where an interaction takes place a quantum onet1 The use of the for polyatomic molecules and condensed matter (multilevel quantum systems) is connected with considerable mathematical difficulties1 A description of various activation processes (diffusion formation of defects chemical reactions) in condensed media can be based on a classical approach1 In this case the states of atoms in solids are described with classical distribution functi ons1 So for example the Arreniusian dependence for the diffusion coefficient found experimentaly can be obtai ned by calculating particles flux (obeying the Maxwellian distribution) overcoming a potential barrier2. An ana logous approach can be used to describe the processes taking place under laser radiation considering that absor ption of laser radiation occurs by quanta whereas the system is described with the classical distribution func tion Let a particle system be characterized by the distribution function over energies F(E)1 The particles
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Stepanov "Kinetics of activation processes at laser resonance action", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990);


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