1 October 1990 Photochemical engineering of silicon dioxide
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Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23720
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
Abstract
The growth of large area and directly patterned oxides on silicon using a variety of photon wavelengths is described. In particular the drive towards low temperature and high quality ultrathin layers will be emphasised. Towards this goal we show that U. V. photons initiate more efficient growth than does visible radiation. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Parthiv Patel, Vishal Nayar, F. Micheli, and Ian W. Boyd "Photochemical engineering of silicon dioxide", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23720; https://doi.org/10.1117/12.23720
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