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1 October 1990 Positive photoresist ablation with excimer laser
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Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23717
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
Abstract
The quantitative model of PHMA ablation is developed. The photochemical reactions heating of the polymer film and mechanical stresses are taken into consideration. The increasing of the optical absorption during the photochemical reaction caused by excimer laser is investigated. The developed model allowed to evalute the ablation parameters and to estimate the spatial resolution of this process. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moishe S. Kitai, Valerie L. Popkov, and Vladimir A. Semchishen "Positive photoresist ablation with excimer laser", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); https://doi.org/10.1117/12.23717
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