1 October 1990 Surface nitride/oxynitride layers obtained by multipulse excimer laser irradiation of metal and semiconductor samples
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Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23731
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
Abstract
We report the synthesis of surface nitrides by multipulse XeC1 exciTaer laser irradiation in ambient NH3 atmosphere of metal (Ti Mo) and semiconductor (Si Ge) samples. The amount of nitride formed was shown to depend under various extents on the kind of sample the incident laser fluence and the number of subsequent laser pulses. The nitridation process is very sensitive to the oxygen presence. It was evidenced that only traces of oxygen were sufficient for promoting the formation of oxides and oxynitrides. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilberto Leggieri, Armando Luches, Maurizio Martino, Maria Rita Perrone, Valentin Craciun, Ion N. Mihailescu, Ioan Ursu, S. Ganatsios, "Surface nitride/oxynitride layers obtained by multipulse excimer laser irradiation of metal and semiconductor samples", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23731; https://doi.org/10.1117/12.23731
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