1 April 1991 Observation of multiphoton photoemission from a NEA GaAs photocathode
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Proceedings Volume 1358, 19th Intl Congress on High-Speed Photography and Photonics; (1991) https://doi.org/10.1117/12.24093
Event: 19th International Congress on High-Speed Photography and Photonics, 1990, Cambridge, United Kingdom
Abstract
Cubic responses in photoelectron emission from a , 02 activated GaAs layer, illuminated by a Q-switched Er ,Thi,Ho : YLF laser ( 2 .O6um) both at room temperature and at liquid nitrogen temperature ( 77K ) were investigated . Photocurrent density proportional to the cubic of intensity of incident light over three orders of magnitude at both temperatures shows not only thatthe electron emission is three-photon photoemission, but also that thermal emission is nebligible at room temperature in our case. The photoemissive current from a P-type monocrystal GaAs substrate activated only by caesium shows six power dependence on light intensity . Comparisons of measured three-photon photoemission coefficient of GaAs(Cs,02) with a theoretical estimated values and with four-photon photoemission coefficient of a Cs3Sb photocathode are given.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liming Wang, Xun Hou, Zhao Cheng, "Observation of multiphoton photoemission from a NEA GaAs photocathode", Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.24093; https://doi.org/10.1117/12.24093
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