PROCEEDINGS VOLUME 1361
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS | 28 OCTOBER - 2 NOVEMBER 1990
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Editor(s): Manijeh Razeghi
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS
28 October - 2 November 1990
Aachen, Germany
Growth of Lattice-Matched III-V Compounds
Proc. SPIE 1361, Real-time x-ray studies of semiconductor device structures, 0000 (1 March 1991); doi: 10.1117/12.47673
Proc. SPIE 1361, Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy, 0000 (1 March 1991); doi: 10.1117/12.24284
Proc. SPIE 1361, Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs, 0000 (1 March 1991); doi: 10.1117/12.24285
Physical Concepts and Characterization of Materials I
Proc. SPIE 1361, Radiative processes in quantum-confined structures, 0000 (1 March 1991); doi: 10.1117/12.24286
Proc. SPIE 1361, Photoreflectance for the in-situ monitoring of semiconductor growth and processing, 0000 (1 March 1991); doi: 10.1117/12.24287
Growth of Lattice-Matched III-V Compounds
Proc. SPIE 1361, Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application, 0000 (1 March 1991); doi: 10.1117/12.24288
Wide Band-Gap Semiconductors
Proc. SPIE 1361, High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment, 0000 (1 March 1991); doi: 10.1117/12.24289
Optical Computing
Proc. SPIE 1361, Optoelectronic neuron, 0000 (1 March 1991); doi: 10.1117/12.24290
Material Characterization
Proc. SPIE 1361, Deep levels in III-V compounds, heterostructures, and superlattices, 0000 (1 March 1991); doi: 10.1117/12.24309
Proc. SPIE 1361, In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements, 0000 (1 March 1991); doi: 10.1117/12.24320
Proc. SPIE 1361, Microscopic origin of the shallow-deep transition of impurity levels in III-V and II-VI semiconductors, 0000 (1 March 1991); doi: 10.1117/12.24341
Physical Concepts and Characterization of Materials II
Proc. SPIE 1361, Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy, 0000 (1 March 1991); doi: 10.1117/12.24361
Optoelectronic Quantum Devices
Proc. SPIE 1361, Recent progress on research of materials for optoelectronic device applications in China, 0000 (1 March 1991); doi: 10.1117/12.24364
Transport Phenomena in Heterostructures and Quantum Wells
Proc. SPIE 1361, Tunneling spectroscopy at nanometer scale in molecular beam epitaxy grown (Al)GaAs multilayers, 0000 (1 March 1991); doi: 10.1117/12.24365
Si and Si-Ge Alloys
Proc. SPIE 1361, Device concepts for SiGe optoelectronics, 0000 (1 March 1991); doi: 10.1117/12.24368
Proc. SPIE 1361, Some new insights in the physics of quantum-well devices, 0000 (1 March 1991); doi: 10.1117/12.24369
III-V and II-VI Epitaxy on Si
Proc. SPIE 1361, High-performance GaAs on silicon technology for VLSI, MMICs, and optical interconnects, 0000 (1 March 1991); doi: 10.1117/12.24371
Proc. SPIE 1361, Fabrication technology of strained layer heterostructure devices, 0000 (1 March 1991); doi: 10.1117/12.24372
Physics and Applications of Strained Layers
Proc. SPIE 1361, Electro-optical effects in semiconductor superlattices, 0000 (1 March 1991); doi: 10.1117/12.24373
Proc. SPIE 1361, Nonlinear optical properties of nipi and hetero nipi superlattices and their application for optoelectronics, 0000 (1 March 1991); doi: 10.1117/12.24375
Advanced Material Technology
Proc. SPIE 1361, Current trends and issues for low-damage dry etching of optoelectronic devices, 0000 (1 March 1991); doi: 10.1117/12.24377
Proc. SPIE 1361, Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials, 0000 (1 March 1991); doi: 10.1117/12.24378
Proc. SPIE 1361, Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry, 0000 (1 March 1991); doi: 10.1117/12.24379
Narrow-Bandgap and Infrared Materials
Proc. SPIE 1361, Novel narrow-gap semiconductor systems, 0000 (1 March 1991); doi: 10.1117/12.24382
Nonlinear Optical Phenomena in Bulk and Multiquantum Wells
Proc. SPIE 1361, Bistable optical switching in GaAs multiple-quantum-well epitaxial etalons, 0000 (1 March 1991); doi: 10.1117/12.24383
Narrow-Bandgap and Infrared Materials
Proc. SPIE 1361, Electronic properties of mercury-based type-III superlattices, 0000 (1 March 1991); doi: 10.1117/12.24384
Advanced Material Technology
Proc. SPIE 1361, Large-scale industrial application for excimer lasers: via-hole-drilling by photoablation, 0000 (1 March 1991); doi: 10.1117/12.24385
Additional Paper
Proc. SPIE 1361, MOVPE technology in device applications for telecommunication, 0000 (1 March 1991); doi: 10.1117/12.47674
Physical Concepts and Characterization of Materials II
Proc. SPIE 1361, Quantum wells and artificially structured materials for nonlinear optics, 0000 (1 March 1991); doi: 10.1117/12.24387
Growth of Lattice-Matched III-V Compounds
Proc. SPIE 1361, Effects of TMSb/TEGa ratios on epilayer properties of gallium antimonide grown by low-pressure MOCVD, 0000 (1 March 1991); doi: 10.1117/12.24388
Physical Concepts and Characterization of Materials I
Proc. SPIE 1361, Time-resolved luminescence experiments on modulation n-doped GaAs quantum wells, 0000 (1 March 1991); doi: 10.1117/12.24389
Proc. SPIE 1361, Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide, 0000 (1 March 1991); doi: 10.1117/12.24390
Proc. SPIE 1361, Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells, 0000 (1 March 1991); doi: 10.1117/12.24392
Wide Band-Gap Semiconductors
Proc. SPIE 1361, Optical properties of molecular beam epitaxy grown ZnTe epilayers, 0000 (1 March 1991); doi: 10.1117/12.24393
Proc. SPIE 1361, Silicon carbide layers produced by rapid thermal chemical vapor deposition, 0000 (1 March 1991); doi: 10.1117/12.24394
Proc. SPIE 1361, Band structure and optical properties of silicon carbide, 0000 (1 March 1991); doi: 10.1117/12.24395
Material Characterization
Proc. SPIE 1361, Luminescence molulation for the characterization of radiation damage within scintillator material, 0000 (1 March 1991); doi: 10.1117/12.24396
Proc. SPIE 1361, Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100), 0000 (1 March 1991); doi: 10.1117/12.24397
Proc. SPIE 1361, Emission of the 1.54um Er-related peaks by impact excitation of Er atoms in InP and its characteristics, 0000 (1 March 1991); doi: 10.1117/12.24398
Physical Concepts and Characterization of Materials II
Proc. SPIE 1361, Raman scattering determination of nonpersistent optical control of electron density in a heterojunction, 0000 (1 March 1991); doi: 10.1117/12.24399
Proc. SPIE 1361, Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers, 0000 (1 March 1991); doi: 10.1117/12.24401
Si and Si-Ge Alloys
Proc. SPIE 1361, Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance, 0000 (1 March 1991); doi: 10.1117/12.24402
Proc. SPIE 1361, Raman scattering characterization of direct gap Si/Ge superlattices, 0000 (1 March 1991); doi: 10.1117/12.24403
Proc. SPIE 1361, Study of properties of a-Si1-xGex:H prepared by SAP-CVD method, 0000 (1 March 1991); doi: 10.1117/12.24405
III-V and II-VI Epitaxy on Si
Proc. SPIE 1361, Molecular beam epitaxy/liquid phase epitaxy hybrid growth for GaAs-LED on Si, 0000 (1 March 1991); doi: 10.1117/12.24406
Proc. SPIE 1361, Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells, 0000 (1 March 1991); doi: 10.1117/12.24407
Proc. SPIE 1361, Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy, 0000 (1 March 1991); doi: 10.1117/12.24408
Proc. SPIE 1361, Heteroepitaxy of II-VI and IV-VI semiconductors on Si substrates, 0000 (1 March 1991); doi: 10.1117/12.24409
Proc. SPIE 1361, Strained semiconductors and heterostructures: synthesis and applications, 0000 (1 March 1991); doi: 10.1117/12.24410
Physics and Applications of Strained Layers
Proc. SPIE 1361, Optical properties of InGaAs/InP strained quantum wells, 0000 (1 March 1991); doi: 10.1117/12.24411
Proc. SPIE 1361, Measurements of the InxGa1-xAs/GaAs critical layer thickness, 0000 (1 March 1991); doi: 10.1117/12.24412
Proc. SPIE 1361, Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives, 0000 (1 March 1991); doi: 10.1117/12.24413
Proc. SPIE 1361, Electronic properties of Si-doped nipi structures in GaAs, 0000 (1 March 1991); doi: 10.1117/12.24414
Advanced Material Technology
Proc. SPIE 1361, Epitaxial growth of gallium arsenide from elemental arsenic, 0000 (1 March 1991); doi: 10.1117/12.24416
Proc. SPIE 1361, Application of epitaxial lift-off to optoelectronic material studies, 0000 (1 March 1991); doi: 10.1117/12.24417
Proc. SPIE 1361, Reactive ion etching of InP and its optical assessment, 0000 (1 March 1991); doi: 10.1117/12.24418
Quantum Devices
Proc. SPIE 1361, Microfabrication techniques for semiconductor lasers, 0000 (1 March 1991); doi: 10.1117/12.24419
Nonlinear Optical Phenomena in Organic Materials
Proc. SPIE 1361, Nonlinear optical properties of xanthone derivatives, 0000 (1 March 1991); doi: 10.1117/12.24420