Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry

David E. Aspnes

doi:10.1117/12.24379

1 March 1991 Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry

David E. Aspnes

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24379
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

In the 1990s increasing emphasis will be placed on improving OEIC capabilities by better understanding semiconductor crystal growth processes and by monitoring and controlling semiconductor crystal growth in real time. The noninvasive nondestructive characteristics of optical probes makes them particularly attractive for these purposes. Here I briefly discuss optical approaches directed toward achieving these goals and present some examples that illustrate work in this area currently being done at Beilcore.

Citation Download Citation

David E. Aspnes "Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24379

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