1 March 1991 Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry
Author Affiliations +
Abstract
In the 1990s increasing emphasis will be placed on improving OEIC capabilities by better understanding semiconductor crystal growth processes and by monitoring and controlling semiconductor crystal growth in real time. The noninvasive nondestructive characteristics of optical probes makes them particularly attractive for these purposes. Here I briefly discuss optical approaches directed toward achieving these goals and present some examples that illustrate work in this area currently being done at Beilcore.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David E. Aspnes, David E. Aspnes, } "Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24379; https://doi.org/10.1117/12.24379
PROCEEDINGS
11 PAGES


SHARE
Back to Top