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1 March 1991 Average energy gap of AIBIIIC2VI optoelectronic materials
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(In this paper we propose a model based on plasma oscillations theory of solids for the calculatio f th average energy gap of optoelectronic materials having A B-''- 1C2 chalcopyrite stru eture. In the present calculation special care of delectrons in the case of noble and transition metal compounds has been taken into account. Our calculated values are in excellent agreement with the reported values). The dielectric theory of Phillips1 Van Vechten2''3 and Levine has been widely used in a varity of physicochemical problems relating to crystal structures nonlinear optical susceptibilit ies dielectric constant cohesive energies heats of formation average energy gaps etc. Using the concept of these theories the author 5 has recently developed a model based on plasma oscill ations theory of solids for the calculation of the covalent (Eh)afld ionic (C) energy gaps of several semiconductors having different crystal structures. . In the present paper we extend the calculation of the average energy gap in the case of AIBIIIC2VI semiconductors. The expressons for the Eh and C in terms of plasmon energy can be written as7 Eh K1 (tw)L6533 eV (1) C K2b (!iw)2" ex [ K3(hw)" 3 ] eV . (2) If delectrons are present in the crystal following relationhas been developed for the ionic energy gap while the covalent energy gap remains the same. C Kb (w)2" exp [K5 (''hw) (hw)2" 3J eV () where K''s
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Virendra Kumar and Dinesh Chandra "Average energy gap of AIBIIIC2VI optoelectronic materials", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991);

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