Paper
1 March 1991 Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
Peter Guttmann, Gentsho V. Danev, Erintche M. Spassova, Sergey V. Babin
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Abstract
The changes in the chemical and optical properties of the thin (8001200 A) layers of As2S3 after exposure with photons (1 to 40 J/cm2) electrons (3. 2. 1O to 1. 28 102 C/cm2) or soft Xradiation (0. 1 to 1 1 1 . 0 J/cm2) are studied. The structural changes occurring after exposure lead to changes in the alkaline stability of the exposed regions. The optimum exposure doses for As 25 3 layers are determined allowing their use for ebeam and xray lithographic purposes. The high stability of the layers to a great number of acid etchers used in microelectronic technologies and the stability in TUE conditions in oxygen medium make the layers accomplishing microlithographic tasks.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Guttmann, Gentsho V. Danev, Erintche M. Spassova, and Sergey V. Babin "Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24327
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Cited by 2 scholarly publications.
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KEYWORDS
Electrons

Photons

Amorphous semiconductors

X-rays

Electron beam lithography

Lithography

Microelectronics

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