1 March 1991 Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
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Abstract
The changes in the chemical and optical properties of the thin (8001200 A) layers of As2S3 after exposure with photons (1 to 40 J/cm2) electrons (3. 2. 1O to 1. 28 102 C/cm2) or soft Xradiation (0. 1 to 1 1 1 . 0 J/cm2) are studied. The structural changes occurring after exposure lead to changes in the alkaline stability of the exposed regions. The optimum exposure doses for As 25 3 layers are determined allowing their use for ebeam and xray lithographic purposes. The high stability of the layers to a great number of acid etchers used in microelectronic technologies and the stability in TUE conditions in oxygen medium make the layers accomplishing microlithographic tasks.
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Peter Guttmann, Gentsho V. Danev, Erintche M. Spassova, Sergey V. Babin, "Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24327; https://doi.org/10.1117/12.24327
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