1 March 1991 Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials
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Abstract
This paper deals with growth of GaAs InP and their ternaries quaternaries and heterostructures by the gas-source molecular beam epitaxy (GSMBE) method. Epilayer qualities are discussed and compared with those obtained by other methods. Some problems related to growth of layers and interfaces are discussed in detail. Properties of lasers photodetectors and optical modulators fabricated by GSMBE are presented.
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Markus Pessa, T. Hakkarainen, Jari Keskinen, Keijo Rakennus, Arto K. Salokatve, Guodong Zhang, Harry M. Asonen, "Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24378; https://doi.org/10.1117/12.24378
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