1 March 1991 Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface
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Abstract
The authors perform an analysis of silicon defect stncture as a function of irradiation dose based mainly on their infrared absorption data for neutron-damaged Si and the available literature results for neutron- and electron-irradiated Si . Remarkable correlations between Fermi level position in irradiated Si and at the silicon - (reactive and unreactive ) metal interface are presented and discussed.
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Ryszard J. Iwanowski, Ryszard J. Iwanowski, Jakub J. Tatarkiewicz, Jakub J. Tatarkiewicz, } "Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24440; https://doi.org/10.1117/12.24440
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