1 March 1991 Density of localized states in glow-discharge a-Si1-x Cx:H
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Abstract
For a-Si1 C :H samples prepared with /([CH4J + [SiH4J) ratios of 0. 1 0. 2 dxO. 25 the density of deep states has been investigated by means of post-transit-time photocurrent analysis and thermally stimulated conductivity. Both techniques yield results which are in good agreement and show a localized states density which rises towards midgap.
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Ozcan Oktu, Sandro Usala, Guy J. Adriaenssens, H. Tolunay, A. Eray, "Density of localized states in glow-discharge a-Si1-x Cx:H", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24296; https://doi.org/10.1117/12.24296
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