1 March 1991 Device concepts for SiGe optoelectronics
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Strain induced band gap decrease and therefore enhanced near infrared absorption were demonstrated in the past with SiGe heterostructure receiver devices. Quasidirect transitions are expected for ultrathin SiGe superlattices because of zone folding effects from the superlattice periodicity. We report about experimental results from strained layer structures about device demonstrators and about device relevant theoretical predictions. Basic concepts of SiGe optoelectronic devices are explained and possible routes of integration with Si microelectronics are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erich Kasper, Erich Kasper, Hartmut Presting, Hartmut Presting, } "Device concepts for SiGe optoelectronics", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24368; https://doi.org/10.1117/12.24368

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