Paper
1 March 1991 Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells
Bernard Sermage, Jean Michel Gerard, Lorenzo Bergomi, Jean Yves Marzin
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Abstract
The repartition ofnonradiative recombination centers density in a quantum well has been tested by timeresolved luminescence in samples containing an InAs plane inside a 16 nm wide GaAs well in Ga7AL3As. The results show unambiguously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime () vary between 4 ns when the InAs monolayer is close to the inverted interface and 8 ns when it is near the direct one.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Sermage, Jean Michel Gerard, Lorenzo Bergomi, and Jean Yves Marzin "Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24392
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KEYWORDS
Indium arsenide

Interfaces

Quantum wells

Gallium arsenide

Indium

Luminescence

Molecular beam epitaxy

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