1 March 1991 Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells
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Abstract
The repartition ofnonradiative recombination centers density in a quantum well has been tested by timeresolved luminescence in samples containing an InAs plane inside a 16 nm wide GaAs well in Ga7AL3As. The results show unambiguously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime () vary between 4 ns when the InAs monolayer is close to the inverted interface and 8 ns when it is near the direct one.
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Bernard Sermage, Bernard Sermage, Jean Michel Gerard, Jean Michel Gerard, Lorenzo Bergomi, Lorenzo Bergomi, Jean Yves Marzin, Jean Yves Marzin, } "Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24392; https://doi.org/10.1117/12.24392
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