1 March 1991 Electronic properties of mercury-based type-III superlattices
Author Affiliations +
Abstract
IT-VT superlattices formed with CdTe and a zero-gap mercury based compound have been termed ''Type III" heterostructures. They can be either narrow band-gap semiconductors or semimetals depending on layer thicknesses and temperature. We shall report cyclotron resonance measurements on high electron mobility HgZnTe-CdTe and HgMnTe-CdTe superlattices grown by molecular beam epitaxy. The theoretical analysis of the data leads to an accurate determination of the electronic properties of these new infrared materials (superlattices bandgap as a function of the temperature temperature induced semimetal - semiconductor transition electron mass anisotropy exchange interaction in the diluted magnetic semiconductor superlattices. . . ).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yves Guldner, Yves Guldner, J. Manasses, J. Manasses, } "Electronic properties of mercury-based type-III superlattices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24384; https://doi.org/10.1117/12.24384
PROCEEDINGS
12 PAGES


SHARE
Back to Top