1 March 1991 Electronic structure of Ge(001) 2x1 by different angle-resolved photoemission techniques: EDC, CFS and CIS
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991); doi: 10.1117/12.24292
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The dispersion of'' occupied and unoccupied electronic states normal to the surface of clean Ge(OO1) 2x1 surfaces is investigated by angleresolved vacuum UV photoemission using synchrotron radiation. Spectra are taken not only at constant photon energy in the energy distribution curve (EDC) mode but also in modes where the photon energy is scanned to obtain spectra at constant initial state energy (CIS) or constant final state energy (CFS). The results are compared with different bulk band structure calculations by means of electron transition plots (ETplots) where final state energies of observed peaks are displayed as a function of the corresponding initial state energies.
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Lutz Kipp, Recardo Manzke, Michael Skibowski, "Electronic structure of Ge(001) 2x1 by different angle-resolved photoemission techniques: EDC, CFS and CIS", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24292; https://doi.org/10.1117/12.24292
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KEYWORDS
Copper indium disulfide

Optoelectronic devices

Synchrotron radiation

Dispersion

Solids

Photoemission spectroscopy

Ultraviolet radiation

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