Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials

Hans-Joachim Schulz; Karl H. Schoenbach; B. M. Kimpel; Ralf Peter Brinkmann

doi:10.1117/12.24299

1 March 1991 Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials

Hans-Joachim Schulz; Karl H. Schoenbach; B. M. Kimpel; Ralf Peter Brinkmann

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24299
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A model of one-electron states is developed for the energy levels of substitutional chromium ions in GaAs. This strong-crystal field approach allows for t2- and e-type states of the ions Cr4(d2) Cr3(d3) Cr2(d4) and Cr(d5) in a Td environment. A great deal of the reported experimental evidence can be reconciled in a uniform picture by taking into account donor- and acceptor-like processes and internal transitions of these oxidation states. These deliberations are supported by cryo-temperature cathodoluminescence measurements in the near-infrared range.

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Hans-Joachim Schulz, Hans-Joachim Schulz, Karl H. Schoenbach, Karl H. Schoenbach, B. M. Kimpel, B. M. Kimpel, Ralf Peter Brinkmann, Ralf Peter Brinkmann, } "Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24299; https://doi.org/10.1117/12.24299

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