Translator Disclaimer
1 March 1991 Exciton-polariton photoluminescence in ultrapure GaAs
Author Affiliations +
The low temperature photoluminescence of ultra pure GaAs grown by vapour phase epitaxy was investigated .The free exciton luminescence spectnim of GaAs is described in the framework of the polari ton theory . An inf luence of the excitation density and temperature on the polariton luminescence 1 ineshape was studied . Temperature transi tion from the case of the strong exci ton-photon coupi ing to the case of the weak ex citon-photon coupl ing was observed . An opportunity of use of the polariton luinines cence 1 me shape analysis for characterizat ion of pure GaAs crysta 1 s is demoristra ted.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri V. Zhilyaev, Victor V. Rossin, Tatiana V. Rossin, and V. V. Travnikov "Exciton-polariton photoluminescence in ultrapure GaAs", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991);

Back to Top