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1 March 1991 Fabrication of high-radiance LEDs by epitaxial lift-off
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Abstract
Fully processed A1GaAs/GaAs LEDs were lifted off their GaAs substrates and grafted to various host substrates. Due to a metallic back reflector beneath the epitaxial structure, the LED output power was 2 to 3 times increased compared to LEDs still on a GaAs substrate. Output power and spectral responses were significantly influenced by the thermal properties of the host material.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan K.A. Pollentier, Ann Ackaert, Peter M. De Dobbelaere, Luc Buydens, Peter Van Daele, and Piet M. A. Demeester "Fabrication of high-radiance LEDs by epitaxial lift-off", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24339
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