1 March 1991 Frequency response study of traps in III-V compound semiconductors
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In conventional techniques of characterising traps and DX centres in ITT-v compound semiconductors (e. g. Deep Level Transient Spectroscopy Photo Induced Transient Spectroscopy Hall Effect Transient Spectroscopy) the transient or timedomain response of the traps at various temperatures is investigated. Recently a number of researchers in the field including the author have presented a frequencydomain study of the same problem. The advantage of this alternative approach is that it allows one to use the actual device to study traps (unlike the conventional technique where the measurements are carried out on other structures ) . In this paper the theory of the frequencydomain approach is presented with emphasis on microwave devices and a simple experiment based on the theory is described. It is also shown that the same physical concept can be employed to study traps in optical devices.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zain Kachwalla, Zain Kachwalla, } "Frequency response study of traps in III-V compound semiconductors", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24291; https://doi.org/10.1117/12.24291

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