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1 March 1991 Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy
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Abstract
Two different versions of hotwall--epitaxy reactors were used to grow ZnSe and ZnTe layers. In the first type of hotwall epitaxy reactor Zn and Se were evaporated seperately from elemental sources. By changing the Zn/Se ratio in the gas phase we could alter the growth direction of the ZnSe layers from 111 to 100 Raman spectroscopy proved the existence of a Ga2Se3 layer at the GaAs/ZnSe interface. In the other HWE reactor stoichiometric ZnSe and ZnTe were used as source materials. Photoluminescence and Xray rocking curves proved the high quality of the epilayers. The rocking curves showed a full width at half maximum of 75 arcseconds for ZnTe.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt Hingerl, Andreas Pesek, Helmut Sitter, Alois Krost, Dietrich R. T. Zahn, W. Richter, Gotthard Kudlek, and Juergen Gutowski "Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24408
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