Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy

Bruce A. Joyce; J. Zhang; C. Thomas Foxon; D. D. Vvedensky; T. Shitara; A. K. Myers-Beaghton

doi:10.1117/12.24284

1 March 1991 Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy

Bruce A. Joyce, J. Zhang, C. Thomas Foxon, D. D. Vvedensky, T. Shitara, A. K. Myers-Beaghton

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24284
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Recent experimental and theoretical results on cation incorporation dynamics in the MBE growth of 111-V materials will be presented. The measurement techniques were reflection high energy electron diffraction and modulated beam relaxation spectroscopy supported theoretically by Monte Carlo simulation. The concept of surface accumulation of cations (especially indium) during conventional MBE growth is introduced and adatom migration and attachment kinetics are considered in detail.

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Bruce A. Joyce, J. Zhang, C. Thomas Foxon, D. D. Vvedensky, T. Shitara, and A. K. Myers-Beaghton "Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24284

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