1 March 1991 High-conducting p+-InGaAs toplayers produced by simultaneous diffusion of Zn and Cd
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Abstract
Simultaneous diffusion of Zn and Cd yields shallow and high doped pt_InGaAs layers. Using a closed ampoule technique an increa sing amount of CdAs2 in the Cd3As2/Zn3As2 source results in a decrea sing diffusion depth whereas a high hole concentration level can be realised. The experimental result of the simultaneous penetration of Zn and Cd atoms into the crystal can be understood on the basis of an interstitialsubstitutional diffusion mechanism.
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Bernd Gruska, Bernd Gruska, P. Ambree, P. Ambree, K. Wandel, K. Wandel, U. Wielsch, U. Wielsch, } "High-conducting p+-InGaAs toplayers produced by simultaneous diffusion of Zn and Cd", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24439; https://doi.org/10.1117/12.24439
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