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1 March 1991 Investigation of uniform deposition of GaInAsP quantum wells by MOCVD
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The growth pattern of GaInAsfInP quantum wells on large area InP substrates has been investigated. Scanning Photoluminescence (sPL) performed at room temperature has been utilized to map the entire area of the wafers at a spatial resolution of 600x600j. tm. It will be shown that the local variation in energy shift of the quantum well luminescence is caused by variations in growth rate which matches the growth rate distribution in GaInAs bulk layers. The sPL data were compared to model calculations of the growth rate as a function of position on the wafer. Through the acquired insight in the growth process new process parameters could be chosen where not only the uniformity of quantum well thickness but also that of GaInAs bulk layers was substantially improved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Puetz, Carla J. Miner, G. Hingston, Chris J. Moore, Brad Watt, and Glen Hillier "Investigation of uniform deposition of GaInAsP quantum wells by MOCVD", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991);

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