1 March 1991 Measurements of the InxGa1-xAs/GaAs critical layer thickness
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The critical layer thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monolayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.
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Thorvald G. Andersson, Thorvald G. Andersson, M. J. Ekenstedt, M. J. Ekenstedt, Vladimir D. Kulakovskii, Vladimir D. Kulakovskii, S. M. Wang, S. M. Wang, J. Y. Yao, J. Y. Yao, } "Measurements of the InxGa1-xAs/GaAs critical layer thickness", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24412; https://doi.org/10.1117/12.24412

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