1 March 1991 Microscopic origin of the shallow-deep transition of impurity levels in III-V and II-VI semiconductors
Author Affiliations +
Simple donor and acceptor impurities in group Ill-V and Il-VI semiconductors are proposed to have at least two distinct structural configurations which differ by a few tenths of an eV in energy but which have very different electronic properties. The well known shallow-deep transition of donor levels in AlGaAs alloys associated with the DX center and the unusual properties of the EL2-related double donor arsenic-antisite defect in GaAs are intimately connected with the occurrence of such structural metastabilities. We suggest that processes similar to DX center formation inhibit the achievement of low resistivity p-type conductivity in ZnSe and lead to bistability of the Ga-antisite defect in GaAs. The phenomenon of impurity induced metastabilities in semiconductors has been a subject of interest for many years. In the last five years the pervasiveness of this phenomenon and its relevance to the understanding of the sometimes unusual electrical properties of impurities has become better established and understood. As a result, a coherent micoscopic description of the characteristics of several such metastabilities is beginning to emerge.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Chadi, D. J. Chadi, } "Microscopic origin of the shallow-deep transition of impurity levels in III-V and II-VI semiconductors", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24341; https://doi.org/10.1117/12.24341

Back to Top