1 March 1991 Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range
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Abstract
Fabrication of infrared sensor arrays in epitaxial lead-salt layers on Si are described with PbS, PbTe and Pb1SnSe for the SWIR, MWIR and LWIR range. Epitaxy of the 2-3 jim thick layers is obtained with the aid of a 200 nm thick stacked CaF2-BaF2 buffer. Linear arrays with 66 elements were fabricated. For the LWIR range, an array with 10.5 jim cut-off wavelength at 77K and spread below 0. 1 im demonstrates the superior homogeneity achievable with IV-VI materials compared to MCT. The mean quantum efficiency of this array is 59% with 3% standard deviation of the individual sensors.
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Hans Zogg, Jiri Masek, Clau Maissen, Taizo J. Hoshino, Stefan Blunier, A. N. Tiwari, "Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24344; https://doi.org/10.1117/12.24344
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