Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation

Tim Ashley; A. B. Dean; Charles Thomas Elliott; M. R. Houlton; C. F. McConville; Howard A. Tarry; Colin R. Whitehouse

doi:10.1117/12.24426

1 March 1991 Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation

Tim Ashley, A. B. Dean, Charles Thomas Elliott, M. R. Houlton, C. F. McConville, Howard A. Tarry, Colin R. Whitehouse

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24426
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

InSb and related ternary alloys have many potential applications in addition to the conventional one of infrared detection provided that near ambient temperature operation can be achieved. The growth by MBE of n-type and p-type InSb has been established using silicon and beryllium dopants respectively. Multilayer diode structures have been studied up to 300K in order to determine carrier generation mechanisms and examine concepts for ambient temperature operation.

Citation Download Citation

Tim Ashley, A. B. Dean, Charles Thomas Elliott, M. R. Houlton, C. F. McConville, Howard A. Tarry, and Colin R. Whitehouse "Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24426

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