1 March 1991 Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991); doi: 10.1117/12.24413
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
GaP/InP strained-layer superlattices (SLS) grown on GaAs substrates are a novel structure with a large lattice mismatch symmetrically shared (+ 3 . 7 (GaP) -3 . 6 (InP)). We present growth and characterization of two types of GaP/InP based heterostructures: i) isolated SLSs and ii) a SLS based QW confined by A1GaAs barriers. Growth by Atomic Layer MBE has allowed to combine P- and As-containing materials in a controllable way preserving flat interfaces at low substrate temperatures. Optical characterization oftheheterostructures ispresented and correlated with akp model obtaining the first estimation for the conduction band offset at the GaP/InP heteroj unction. All superlattices studied have been found to be spatially direct (type I) being this feature very promising for their use as active layer in a semiconductor QW laser. I.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miguel Recio, Ana Ruiz, Juan Melendez, Jose Maria Rodriguez, Gaspar Armelles, Maria Luisa Dotor, Fernando Briones, "Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24413; https://doi.org/10.1117/12.24413
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KEYWORDS
Laser sintering

Superlattices

Heterojunctions

Quantum wells

Gallium arsenide

Temperature metrology

Optoelectronic devices

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