1 March 1991 Optical properties of molecular beam epitaxy grown ZnTe epilayers
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Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials we investigate the influence of strain between layer and substrate the possible incorporation of impurities the electronic structure of the impurity-related exciton complexes and biexciton recombination processes at high-density excitation.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gotthard Kudlek, Gotthard Kudlek, Nazmir Presser, Nazmir Presser, Juergen Gutowski, Juergen Gutowski, David L. Mathine, David L. Mathine, Masakazu Kobayashi, Masakazu Kobayashi, Robert L. Gunshor, Robert L. Gunshor, } "Optical properties of molecular beam epitaxy grown ZnTe epilayers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24393; https://doi.org/10.1117/12.24393

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