1 March 1991 Optical properties of molecular beam epitaxy grown ZnTe epilayers
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Abstract
Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials we investigate the influence of strain between layer and substrate the possible incorporation of impurities the electronic structure of the impurity-related exciton complexes and biexciton recombination processes at high-density excitation.
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Gotthard Kudlek, Gotthard Kudlek, Nazmir Presser, Nazmir Presser, Juergen Gutowski, Juergen Gutowski, David L. Mathine, David L. Mathine, Masakazu Kobayashi, Masakazu Kobayashi, Robert L. Gunshor, Robert L. Gunshor, } "Optical properties of molecular beam epitaxy grown ZnTe epilayers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24393; https://doi.org/10.1117/12.24393
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