1 March 1991 Oxide removal from GaAs(100) by atomic hydrogen
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We used molecular hydrogen in the presence of a hot tungsten filament to clean GaAs(100) wafers after inserton into an UHV4 chamber. The H2-pressure was varied between lxlO torr and 5x10 torr. During exposure the sample remained either at room temperature or at elevated temperatures up to 600 K. The mechanism we suggest for the removal of oxygen and carbon is the formation of chemical products like H90 and CH4 and their subsequent desorption. Also a build-up of gaflium- and arsenic-hydrides and their desorption is possible. After cleaning a clear ixi-LEED pattern indicates a rather well-ordered surface.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juergen Alois Schaefer, Juergen Alois Schaefer, V. Persch, V. Persch, S. Stock, S. Stock, Thomas Allinger, Thomas Allinger, A. Goldmann, A. Goldmann, } "Oxide removal from GaAs(100) by atomic hydrogen", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24332; https://doi.org/10.1117/12.24332


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