1 March 1991 Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices
Author Affiliations +
Abstract
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) measurements are used to characterize short period selectively or uniformly Si-doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy at two different temperatures. DLTS measurements show the presence of DX center with an apparent activation energy of 0. 42eV and a trap concentration which decreases as the growth temperature is lowered. From an analysis of the DX concentration and binding energy we show that this center is mainly located in the AlAs layers. The high growth temperature enhances the silicon diffusion from the GaAs wells towards the AlAs layers which allows us to detect the DX even when only the GaAs layers are doped. The PL measurements performed on the near band edge show different transitions. No deep luminescence in the near infra-red spectrum is observed on these MBE layers despite the high DX concentration.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soraya Ababou, Taha Benyattou, Jean J. Marchand, Louis Mayet, Gerard Guillot, Francis Mollot, and Richard Planel "Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24433; https://doi.org/10.1117/12.24433
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top