Paper
1 March 1991 Raman scattering determination of nonpersistent optical control of electron density in a heterojunction
David Robert Richards, Gerhard Fasol, Klaus H. Ploog
Author Affiliations +
Abstract
We show that electronic Raman scattering measurements of the intrasubband plasmon dispersion in a GaAs/A1GaAs heterojunction is a viable contactless optical method for the determination of sheet carrier density of the two-dimensional electron gas. We demonstrate non-persistent optical control of the carrier density by a dynamic charge transfer effect: from Raman measurements of the plasmon we directly determine the change in carrier concentration with excess illumination.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Robert Richards, Gerhard Fasol, and Klaus H. Ploog "Raman scattering determination of nonpersistent optical control of electron density in a heterojunction", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24399
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KEYWORDS
Plasmons

Raman spectroscopy

Raman scattering

Heterojunctions

Optoelectronic devices

Interfaces

Dielectrics

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