Paper
1 March 1991 Real-time x-ray studies of semiconductor device structures
Roy Clarke, Waldemar Dos Passos, Yi-Jen Chan, Dimitris Pavlidis, Walter P. Lowe, Brian G. Rodricks, Christine M. Brizard
Author Affiliations +
Abstract
We discuss the application of high-resolution x-ray diffractometry to studies of semiconductor heterostructures. A new technique has been devised which extends structural measurements into the time domain. Using x-ray synchrotron radiation in conjunction with dispersive optics and fast x-ray area detectors we have been able to study for the first time the structure of heterointerfaces undergoing thermal processing. The techniques are illustrated with results on the strain kinetics of SQW''s and ion-implanted InAli_As layers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roy Clarke, Waldemar Dos Passos, Yi-Jen Chan, Dimitris Pavlidis, Walter P. Lowe, Brian G. Rodricks, and Christine M. Brizard "Real-time x-ray studies of semiconductor device structures", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.47673
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Cited by 1 scholarly publication.
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KEYWORDS
X-rays

Semiconductors

X-ray detectors

X-ray optics

Heterojunctions

Sensors

Synchrotron radiation

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