Recent progress on research of materials for optoelectronic device applications in China

Lianhui Chen; Mei-Ying Kong; Yi-Ming Wang

doi:10.1117/12.24364

1 March 1991 Recent progress on research of materials for optoelectronic device applications in China

Lianhui Chen, Mei-Ying Kong, Yi-Ming Wang

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24364
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We describe the research activities of materials for optoelectronic device applications in China we laid emphasis on study of growth technology characteristics and physical mechanism of compound semiconductors with the structure of superlattice or quantum well by using home-made MBE or MOCVD systerms. Some performances of our optoelectronic devices based on these materials are also eseed

Citation Download Citation

Lianhui Chen, Mei-Ying Kong, and Yi-Ming Wang "Recent progress on research of materials for optoelectronic device applications in China", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24364

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