1 March 1991 Resonant tunneling in microcrystalline silicon quantum box diode
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991); doi: 10.1117/12.24358
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
STRACT Resonant tunneling in threedimensionally quantum confined (3DQC) microcrystalline silicon surrounded by amorphousSi02(aSiO barriers is experimentally observed. Unlike quantum confinement in lower dimenstons charge accumulation in 3DQC silicon box results in large shifts of the discrete energy states with conductancegate voltage measurements.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raphael Tsu, Qui-Yi Ye, Edward H. Nicollian, "Resonant tunneling in microcrystalline silicon quantum box diode", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24358; https://doi.org/10.1117/12.24358
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Silicon

Microcrystalline materials

Diodes

Electrons

Metals

Optoelectronic devices

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