Silicon carbide layers produced by rapid thermal chemical vapor deposition

F. H. Ruddell; D. McNeill; Brian Mervyn Armstrong; Harold S. Gamble

doi:10.1117/12.24394

1 March 1991 Silicon carbide layers produced by rapid thermal chemical vapor deposition

F. H. Ruddell, D. McNeill, Brian Mervyn Armstrong, Harold S. Gamble

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24394
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A rapid thermal CYD reactor has been employed for the deposition of silicon carbide layers on silicon. Stoichiometric SiC layers were deposited using silane/propane gas chemistry over the temperature range 720-970C. The process wafer was ramped rapidly to the deposition temperature after gas flows were established. The deposition was thus temperature activated so that minimum thermal budgets were obtained. The influence of both process pressure and the silane/propane gas flow ratio on carbon and oxygen content in the films was determined. The critical conditions for the deposition of stoichiometric silicon carbide with minimum oxygen content and without an interfacial oxide layer have been determined. In-situ doping with phosphine has been employed to deposit SiC layers with a phosphorus concentration of 5x1020cm3 and a resistivity of O. 6ohm. cm. Heterojunction silicon bipolar transistors were fabricated with deposited SiC layers for the emitters. While some enhancement was obtained for transistors with oxygen contaminated emitters those with purer emitters had common emitter gains of less than unity. This has been attributed to a reduction in base lifetime due to a carbonisation tail.

Citation Download Citation

F. H. Ruddell, D. McNeill, Brian Mervyn Armstrong, and Harold S. Gamble "Silicon carbide layers produced by rapid thermal chemical vapor deposition", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24394

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