1 March 1991 Stabilization of CdxHg1-xTe heterointerfaces
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Interdiffusion between epitaxial layers of (Hg,Cd)Te of unequal composition (in the limit, HgTe and CdTe) gives rise to non-abrupt interfaces in heterostructure devices composed of these materials. In this paper, it is proposed that a strained ZnTe barrier layer, interposed at such a heterointerface, may inhibit interdiffusion. Initial results obtained from a CdTe-ZnTe-HgCdTe test structure grown by MOVPE at 325°C are presented. TEM observations and electron microprobe measurements indicate that distinct interfaces are maintained.
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Paul A. Clifton, Paul A. Clifton, Paul D. Brown, Paul D. Brown, } "Stabilization of CdxHg1-xTe heterointerfaces", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24340; https://doi.org/10.1117/12.24340

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