1 March 1991 Strained semiconductors and heterostructures: synthesis and applications
Author Affiliations +
Abstract
Strained semiconductors offer an additional degree of freedom in the tailoring of material properties. The growth of strained layers particularly for large degrees of misfits by techniques such as MBE and MOCVD are not particularly well understood. In the case of biaxial compressive strain it is apparent that above 2 misfit growth proceeds in a 3-D island mode. Biaxial strain in pseudomorphic structures dramatically alters the bandstructure. As a result the transport and optical properties are changed. The properties of strained MQW lasers modulators and MODFETs will be described and discussed. I.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pallab Bhattacharya, Pallab Bhattacharya, Jasprit Singh, Jasprit Singh, } "Strained semiconductors and heterostructures: synthesis and applications", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24410; https://doi.org/10.1117/12.24410
PROCEEDINGS
12 PAGES


SHARE
Back to Top