1 March 1991 Time-resolved luminescence experiments on modulation n-doped GaAs quantum wells
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Time resolved luminescence experiments performed on GaA1As-GaAs-A1As nonsymmetric modulation n-doped thick Quantum Wells show an atypical behaviour regarding similar but symmetric ( GaA1As-GaAs-GaA1As ) Quantum Wells. In the latter system the luminescence has the standard radiative lifetimes in the range reported in the literature. Much shorter lifetimes for nonsymmetric Quantum Wells are a clear indication that a non radiative mechanism is associated with AlAs- GaAs interface. The temperature dependence ofthe lifetime and magneto-optical experiments suggest the existence of a non-radiative level 5 meV above the third electric subband of the Quantum Wells. Transfer ofcharge from GaAs ( F point ) to AlAs ( X point ) is proposed as a mechanism to shorten the lifetime ofthe luminescence process in agreement with theoretical calculations. 1_
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Lopez, C. Lopez, Francisco Meseguer, Francisco Meseguer, Jose Sanchez-Dehesa, Jose Sanchez-Dehesa, Wolfgang W. Ruehle, Wolfgang W. Ruehle, Klaus H. Ploog, Klaus H. Ploog, } "Time-resolved luminescence experiments on modulation n-doped GaAs quantum wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24389; https://doi.org/10.1117/12.24389

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