1 March 1991 Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition
Author Affiliations +
Abstract
We present a complete characterization study of GaAs/Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) at 750C using the two-step method. High resolution transmission electron microscopy secondary ion mass spectroscopy deep level transient spectroscopy (DLTS) and photoluminescence (PL) spectroscopy have been performed to study the initial stage of growth misfit and threading dislocations Si diffusion and the deep levels in the GaAs layer. We describe the influence of GaAs/AlAs superlattices in the buffer layer on the decrease of dislocation density and on Si diffusion from the substrate and the existence of deep electron traps induced by the heteroepitaxy. DLTS reveals hole traps attributed to Si incorporation on the basis of PL measurements which could contribute to the reduction of the minority carrier lifetime. We also show an improvement of the layer quality by the use of selective epitaxy.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georges E. Bremond, Hicham Said, Gerard Guillot, Jaafar Meddeb, M. Pitaval, Nasser Draidia, and Rozette Azoulay "Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24436; https://doi.org/10.1117/12.24436
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top