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1 March 1991 Tunneling spectroscopy at nanometer scale in molecular beam epitaxy grown (Al)GaAs multilayers
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Abstract
ihe (1 10) face in Ill-V binaiy compounds is a non-polar surface and allows the determination of valence and conduction hand edges as well as energy gap at the clean ultra-high vacuum cleaved surface. In epitaxial 111-V semiconductor multilayers this (1 10) face forms a cross section to the preferential 001 growth direction. With scanning tunneljng microscopy we have been able to observe the atomic arrangement in MBE-grown GaAs and A1GaAs layers as well in their interfaces. The binary and ternary cornpoupds can be clearly distinguished and we also find indications for composition fluctuations in the ternary. The atomic resolution images show that the material transition occurs over 2 unit cells. From the current-voltage characteristics across the GaAs-AlGaAs interface the valence band edge is determined and compared with theoretical calculations. The electronic valence band transition occurs over a length scale of less than 4 urn.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Albrektsen, Paul Koenraad, and Huub W. Salemink "Tunneling spectroscopy at nanometer scale in molecular beam epitaxy grown (Al)GaAs multilayers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24365
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