1 February 1991 Asymmetric superlattices for microwave detection
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991); doi: 10.1117/12.24559
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The development and testing of resonant tunneling diodes with asymmetric current-voltage characteristics is described emphasizing their use as video detectors in the X-band. The I-V characteristics of a five-barrier ''graded-parameter superlattice'' structure are simulated showing a distinct asymmetry. The growth of two wafers by molecular-beam epitaxy is described in which n(+)GaAs substrates are used. The current-voltage characteristics show a significant asymmetry between forward and reverse bias, and the experimental and simulated results show discrepancies that are attributed to tunneling via the X-point. The superlattice diodes show good microwave behavior and dynamic ranges with temperature stability away from the negative differential regions that are comparable to those in Ge back diodes and better than that for Schottky diodes and pdb diodes.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard T. Syme, Michael Joseph Kelly, Angus Condie, Ian Dale, "Asymmetric superlattices for microwave detection", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24559; https://doi.org/10.1117/12.24559
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Diodes

Sensors

Microwave radiation

Optoelectronic devices

Superlattices

Temperature metrology

Video

RELATED CONTENT

Schottky Diode Detector Research At MPB Technologies Inc.
Proceedings of SPIE (September 26 1986)
Germanium Photodiodes - Temperature And Uniformity Effects
Proceedings of SPIE (November 19 1985)
MCT FPAs at high operating temperatures
Proceedings of SPIE (September 28 2011)
Novel GaAs/AlAs tunnel structures as microwave detectors
Proceedings of SPIE (September 03 1992)

Back to Top