1 February 1991 Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24541
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The band-structure dependence of impact ionisation in bulk semiconductors strained Ge/Si alloys and multiple quantum well avalanche photodiodes was studied theoretically and experimentally. Hydrostatic pressure was used to investigate impact ionisation in Si Ge and GaAs. The results are interpreted with the aid of theoretically calculated threshold energies for impact ionisation. Calculated thresholds in strained Ge/Si alloys suggest that this material system may be of interest for low-noise photodetectors. However Monte Carlo studies of impact ionisation in multiple quantum well (MQW) avalanche photodiodes (APDs) show that the F valley conduction band offset does not lead to improved performance in GaAs/AlGaAs MQW APDs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor K. Czajkowski, Jeremy Allam, Alfred R. Adams, "Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24541; https://doi.org/10.1117/12.24541
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